PolarHT TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFH 69N30P
IXFT 69N30P
V DSS
I D25
R DS(on)
t rr
=
=
300
69
49
200
V
A
m ?
ns
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXFH)
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
300
300
± 20
V
V
V
V GSM
I D25
Transient
T C = 25 ° C
± 30
69
V
A
G
D
S
D (TAB)
I DM
T C = 25 ° C, pulse width limited by T JM
200
A
I AR
E AR
E AS
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
69
50
1.5
A
mJ
J
TO-268 (IXFT)
dv/dt
P D
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
10
500
V/ns
W
G
S
D (TAB)
T J
T JM
T stg
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
-55 ... +150
150
-55 ... +150
300
260
° C
° C
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
M d
Mounting torque
1.13/10 Nm/lb.in.
Features
Weight
TO-247
TO-268
6
4
g
g
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
300 V
l
l
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
V GS(th)
V DS = V GS , I D = 4 mA
2.5
5.0
V
Advantages
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
l
Easy to mount
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
l
l
Space savings
High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
49
m ?
? 2006 IXYS All rights reserved
DS99220E(01/06)
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